双极晶体管电流增益比的几何建模

Proceedings of the International Conference on ELECTRONICS, COMPUTERS and ARTIFICIAL INTELLIGENCE - ECAI-2013 Pub Date : 2013-06-27 DOI:10.1109/ECAI.2013.6636181

F. Iosif

{"title":"双极晶体管电流增益比的几何建模","authors":"F. Iosif","doi":"10.1109/ECAI.2013.6636181","DOIUrl":null,"url":null,"abstract":"This paper presents a method of determining the superior cut-off frequency for bipolar, alloyed transistors. This method is based on a geometrical modelling of the current gain ratio for this type of transistors; the modeling takes in consideration the displacement of the mobile charge carriers and the technological quantities material dependent.","PeriodicalId":105698,"journal":{"name":"Proceedings of the International Conference on ELECTRONICS, COMPUTERS and ARTIFICIAL INTELLIGENCE - ECAI-2013","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Geometrical modelling of current gain ratio for a bipolar transistor\",\"authors\":\"F. Iosif\",\"doi\":\"10.1109/ECAI.2013.6636181\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a method of determining the superior cut-off frequency for bipolar, alloyed transistors. This method is based on a geometrical modelling of the current gain ratio for this type of transistors; the modeling takes in consideration the displacement of the mobile charge carriers and the technological quantities material dependent.\",\"PeriodicalId\":105698,\"journal\":{\"name\":\"Proceedings of the International Conference on ELECTRONICS, COMPUTERS and ARTIFICIAL INTELLIGENCE - ECAI-2013\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the International Conference on ELECTRONICS, COMPUTERS and ARTIFICIAL INTELLIGENCE - ECAI-2013\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECAI.2013.6636181\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the International Conference on ELECTRONICS, COMPUTERS and ARTIFICIAL INTELLIGENCE - ECAI-2013","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECAI.2013.6636181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

本文提出了一种确定双极合金晶体管最佳截止频率的方法。这种方法是基于这种类型晶体管的电流增益比的几何建模;该模型考虑了移动电荷载体的位移和材料相关的工艺量。

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Geometrical modelling of current gain ratio for a bipolar transistor

This paper presents a method of determining the superior cut-off frequency for bipolar, alloyed transistors. This method is based on a geometrical modelling of the current gain ratio for this type of transistors; the modeling takes in consideration the displacement of the mobile charge carriers and the technological quantities material dependent.

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Proceedings of the International Conference on ELECTRONICS, COMPUTERS and ARTIFICIAL INTELLIGENCE - ECAI-2013

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