Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure

This paper investigates the transport properties of the silicon-germanium nanowire MOSFETs with core-shell structure by using a finite element numerical method for electronic structure, energy level, and channel current computation. Coupled Poisson's equation to Schrodinger's equation for electrostatics calculation and electron structure to current transport equation for channel current computation, the electronic structure, quantized energy levels, relevant wave functions and charge distribution are solved selfconsistently for the core-shell structure MOSFETs. Furthermore, based on these findings, the transistor performances, including the capacitance characteristics and drain current, are also predicted.