{"title":"电子辐照砷化镓中砷反位缺陷亚稳态与红外吸收的关系","authors":"S. Kuisma, K. Saarinen, P. Hautojärvi, C. Corbel","doi":"10.1109/SIM.1996.571095","DOIUrl":null,"url":null,"abstract":"A metastable irradiation-induced vacancy is detected by positrons in semi-insulating GaAs. The vacancy is associated with the metastable state of an irradiation-induced as-antisite-related defect. This metastable state absorbs IR light in contrast to the metastable state of the as-antisite-related native EL2 defect. This property can be explained by the presence of other defects complexed with the as antisite in electron-irradiated GaAs.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Infrared absorption related to the metastable state of arsenic antisite defects in electron-irradiated GaAs\",\"authors\":\"S. Kuisma, K. Saarinen, P. Hautojärvi, C. Corbel\",\"doi\":\"10.1109/SIM.1996.571095\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A metastable irradiation-induced vacancy is detected by positrons in semi-insulating GaAs. The vacancy is associated with the metastable state of an irradiation-induced as-antisite-related defect. This metastable state absorbs IR light in contrast to the metastable state of the as-antisite-related native EL2 defect. This property can be explained by the presence of other defects complexed with the as antisite in electron-irradiated GaAs.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.571095\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.571095","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Infrared absorption related to the metastable state of arsenic antisite defects in electron-irradiated GaAs
A metastable irradiation-induced vacancy is detected by positrons in semi-insulating GaAs. The vacancy is associated with the metastable state of an irradiation-induced as-antisite-related defect. This metastable state absorbs IR light in contrast to the metastable state of the as-antisite-related native EL2 defect. This property can be explained by the presence of other defects complexed with the as antisite in electron-irradiated GaAs.
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