纳米级mosfet中载流子输运的基本物理学

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871193

Mark S. Lundstrom, Z. Ren, S. Datta

{"title":"纳米级mosfet中载流子输运的基本物理学","authors":"Mark S. Lundstrom, Z. Ren, S. Datta","doi":"10.1109/SISPAD.2000.871193","DOIUrl":null,"url":null,"abstract":"A simple, physical view of carrier transport in nanoscale MOSFETs is presented. The role of ballistic transport, scattering and off-transport, equilibrium transport, and quantum transport are illustrated by numerical simulation, and the limitations of common approaches used for device TCAD are examined.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"560","resultStr":"{\"title\":\"Essential physics of carrier transport in nanoscale MOSFETs\",\"authors\":\"Mark S. Lundstrom, Z. Ren, S. Datta\",\"doi\":\"10.1109/SISPAD.2000.871193\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple, physical view of carrier transport in nanoscale MOSFETs is presented. The role of ballistic transport, scattering and off-transport, equilibrium transport, and quantum transport are illustrated by numerical simulation, and the limitations of common approaches used for device TCAD are examined.\",\"PeriodicalId\":132609,\"journal\":{\"name\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"560\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2000.871193\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2000.871193","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 560

摘要

给出了纳米级mosfet中载流子输运的一个简单的物理视图。通过数值模拟说明了弹道输运、散射和离输运、平衡输运和量子输运的作用，并检查了用于器件TCAD的常用方法的局限性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Essential physics of carrier transport in nanoscale MOSFETs

A simple, physical view of carrier transport in nanoscale MOSFETs is presented. The role of ballistic transport, scattering and off-transport, equilibrium transport, and quantum transport are illustrated by numerical simulation, and the limitations of common approaches used for device TCAD are examined.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

自引率

0.00%

发文量