一种模拟鳍宽线边缘粗糙度对FinFET性能影响的新方法

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2010-12-01 DOI:10.1109/EDSSC.2010.5713678

Xinjie Guo, Shaodi Wang, Chenyue Ma, Chenfei Zhang, Xinnan Lin, Wen Wu, F. He, Wenping Wang, Zhiwei Liu, Wei Zhao, Shengqi Yang

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引用次数: 3

摘要

本文建立了一种全三维(3-D)统计模拟方法来研究翅片宽度线边缘粗糙度(LER)对finfet性能的影响。通过Matlab程序引入直线边缘粗糙度，并通过精心设计的仿真实验，研究了固定线性面形参数下的内禀参数波动。结果表明，翅片宽度的LER会引起阈值电压的剧烈变化和波动。仿真结果还表明，即使在低漏极电压下，由于LER效应，速度饱和效应也会产生。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance

This paper developed a full three-dimensional (3-D) statistical simulation approach to investigate Fin-width Line Edge Roughness (LER) effect on the FinFETs performance. The line edge roughness is introduced by Matlab program, and then the intrinsic parameter fluctuations at fixed LER parameters are studied in carefully designed simulation experiments. The result shows that Fin-width LER causes a dramatic shift and fluctuations in threshold voltage. The simulation results also imply that the velocity saturation effect may come into effect even under low drain voltage due to LER effect.

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来源期刊

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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