嵌入式通道SOI器件的研究

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.786075

Xing Zhang, Ru Huang, X. Xi, M. Chan, P. Ko, Yangyuan Wang

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引用次数: 0

摘要

研究了嵌入式通道SOI器件。本文详细介绍了该装置的结构和加工工艺。采用凹槽沟道技术的SOI MOSFET的特性比普通的厚非耗尽和薄膜完全耗尽SOI MOSFET要好得多。采用亚微米工艺制备了具有70 nm硅沟道膜和160 nm硅源/漏极膜的0.15/spl sim/4.0 /spl mu/m凹槽SOI mosfet。跨导和漏极电流比薄膜完全耗尽SOI mosfet增加了40%以上。

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The investigation of recessed channel SOI devices

Recessed channel SOI devices were investigated. In this paper, the structure and processing of such devices is described in detail. The characteristics of a SOI MOSFET using recessed channel technology are much better than normal thick non-depleted and thin-film fully depleted SOI MOSFETs. The 0.15/spl sim/4.0 /spl mu/m recessed channel SOI MOSFETs with a silicon channel film of 70 nm and a source/drain silicon film of 160 nm are developed using a submicron process. The transconductance and drain current are increased by 40% more than thin-film fully depleted SOI MOSFETs.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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