GaSb-InAs全环栅(GAA) p-i-n隧道场效应晶体管(TFET)作为生物传感器的应用分析

2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI:10.1109/INEC.2016.7589324

Ajay, Mridula Gupta, R. Narang, M. Saxena

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引用次数: 14

摘要

本文研究了异质结(HJ) GAA p-i-n TFET结构在生物传感应用中的作用。该器件提供了更好的灵敏度，并根据各种参数(如表面电位、阈值电压和漏极电流)进行了建模。解析建模方案基于二维泊松方程的精确结果解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of GaSb-InAs Gate all around (GAA) p-i-n tunnel FET (TFET) for application as a bio-sensor

The paper investigates the role of hetero Junction (HJ) GAA p-i-n TFET architecture for biosensing applications. The device offers better sensitivity and has been modeled in terms of various parameters such as surface potential, threshold voltage and drain current. Analytical modeling scheme is based the exact resultant solution of two-dimensional Poisson equation.

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2016 IEEE International Nanoelectronics Conference (INEC)

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