{"title":"溶胶-凝胶法处理动态随机存取存储器用SrTiO/ sub3 /薄膜","authors":"Qing-Feng Liu, Xin-Shan Li, Z. Meng","doi":"10.1109/ISE.1996.578192","DOIUrl":null,"url":null,"abstract":"Polycrystalline and crack-free strontium titanate (SrTiO/sub 3/) thin films were deposited on silicon and quartz substrates by the sol-gel technique, using strontium acetate and titanium tetrabutoxide as starting materials. As-deposited thin films were amorphous in structure, the perovskite phase was observed by X-ray diffraction analysis of the thin films heat-treated over 600/spl deg/C.","PeriodicalId":425004,"journal":{"name":"9th International Symposium on Electrets (ISE 9) Proceedings","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sol-gel processing SrTiO/sub 3/ thin films for dynamic random access memory applications\",\"authors\":\"Qing-Feng Liu, Xin-Shan Li, Z. Meng\",\"doi\":\"10.1109/ISE.1996.578192\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Polycrystalline and crack-free strontium titanate (SrTiO/sub 3/) thin films were deposited on silicon and quartz substrates by the sol-gel technique, using strontium acetate and titanium tetrabutoxide as starting materials. As-deposited thin films were amorphous in structure, the perovskite phase was observed by X-ray diffraction analysis of the thin films heat-treated over 600/spl deg/C.\",\"PeriodicalId\":425004,\"journal\":{\"name\":\"9th International Symposium on Electrets (ISE 9) Proceedings\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"9th International Symposium on Electrets (ISE 9) Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISE.1996.578192\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Symposium on Electrets (ISE 9) Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISE.1996.578192","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sol-gel processing SrTiO/sub 3/ thin films for dynamic random access memory applications
Polycrystalline and crack-free strontium titanate (SrTiO/sub 3/) thin films were deposited on silicon and quartz substrates by the sol-gel technique, using strontium acetate and titanium tetrabutoxide as starting materials. As-deposited thin films were amorphous in structure, the perovskite phase was observed by X-ray diffraction analysis of the thin films heat-treated over 600/spl deg/C.