基于nbo2的低功耗和低成本的1S1R开关用于高密度交叉点ReRAM应用

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894405

W. Kim, Hyun Min Lee, B. Kim, Kyooho Jung, T. Seong, S. Kim, H. C. Jung, H. Kim, Jong-Hee Yoo, H. Lee, S. Kim, Suock Chung, Kee-jeung Lee, Jung Hoon Lee, H. Kim, S. Lee, Jianhua Yang, Yoocharn Jeon, R. S. Williams

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引用次数: 37

摘要

本文采用1S1R单元结构，研制了用于低功耗ReRAM操作的5Xnm交叉点单元阵列。通过对TiOx/TaOx基1r和NbO2基1s基TiN基电极的优化，获得了世界上第一个具有最低工作电流(20~50uA)和潜流(~1uA)水平的最佳双极开关特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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NbO2-based low power and cost effective 1S1R switching for high density cross point ReRAM Application

In this paper, 5Xnm cross point cell array for the low power ReRAM operation was developed with 1S1R cell structure. Through the optimization of both TiOx/TaOx based-1R and NbO2 based-1S stacks with TiN based-electrode, the world's first and best bipolar switching characteristics with the lowest operation current (20~50uA) and sneak current (~1uA) level were acquired.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量