M. Katagiri, Y. Yamazaki, N. Sakuma, Mariko Suzuki, T. Sakai, M. Wada, N. Nakamura, N. Matsunaga, Shintaro Sato, M. Nihei, Y. Awano
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Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-enhanced chemical vapor deposition and their electrical properties
We have succeeded in fabricating ultrafine carbon nanotube (CNT) via interconnects with SiOC interlayer dielectrics. High-quality multiwalled CNTs are grown in via holes with a diameter of 70 nm using pulse-exited remote plasma-enhanced chemical vapor deposition at 450 °C. The resistance of a 70-nm-diameter CNT via is 52 Ω, which is the lowest ever reported for CNT via interconnects. The CNT via interconnect has the capability to sustain current density as high as 1×108 A/cm2.
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