B. Narasimham, H. Luk, C. Paone, A-R. Montoya, T. Riehle, M. Smith, L. Tsau
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Scaling Trends and the Effect of Process Variations on the Soft Error Rate of advanced FinFET SRAMs
Scaling trends in the alpha-particle and neutron induced SRAM SER shows an increase in the per-bit SER and percent multi-cell upsets at the 5-nm FinFET process compared to the 7-nm process. Neutron SER tests across process corners show that the faster process corner SER is up to $2\times$ higher than the slower process corner SER in 7-nm and 5-nm FinFETs. The process corner dependence of SER is attributed to differences in propagation delay and single-event transient pulse-widths.
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