{"title":"基于GAN hemt的2GHz 25W级联Doherty射频功率放大器的效率和尺寸优化","authors":"Yoji Murao, K. Ohgami, T. Kaneko","doi":"10.1109/CSICS.2013.6659215","DOIUrl":null,"url":null,"abstract":"NEC has developed a 2.1GHz band very compact and high efficiency power amplifier module based on GaN HEMT cascaded Doherty circuitry. Implemented modules exhibits the amplifier chain power added efficiency of 45% and the final stage drain efficiency of 58% at 25W output level with associated gain of 44dB. The module works well with DPD to achieve -51dBc ACLR using an LTE E-TM1.1 signal with the peak-to-average-power-ratio of 7.1dB. The module occupies only 99cm2. Compact driver stage Doherty circuitry implemented on the multi-layer composite materials PCB contributes both to efficiency enhancement and shrunk foot print.","PeriodicalId":257256,"journal":{"name":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An Efficiency and Size Optimized 2GHz 25W Cascaded Doherty RF Power Amplifiers Using GAN HEMTs\",\"authors\":\"Yoji Murao, K. Ohgami, T. Kaneko\",\"doi\":\"10.1109/CSICS.2013.6659215\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"NEC has developed a 2.1GHz band very compact and high efficiency power amplifier module based on GaN HEMT cascaded Doherty circuitry. Implemented modules exhibits the amplifier chain power added efficiency of 45% and the final stage drain efficiency of 58% at 25W output level with associated gain of 44dB. The module works well with DPD to achieve -51dBc ACLR using an LTE E-TM1.1 signal with the peak-to-average-power-ratio of 7.1dB. The module occupies only 99cm2. Compact driver stage Doherty circuitry implemented on the multi-layer composite materials PCB contributes both to efficiency enhancement and shrunk foot print.\",\"PeriodicalId\":257256,\"journal\":{\"name\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2013.6659215\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2013.6659215","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Efficiency and Size Optimized 2GHz 25W Cascaded Doherty RF Power Amplifiers Using GAN HEMTs
NEC has developed a 2.1GHz band very compact and high efficiency power amplifier module based on GaN HEMT cascaded Doherty circuitry. Implemented modules exhibits the amplifier chain power added efficiency of 45% and the final stage drain efficiency of 58% at 25W output level with associated gain of 44dB. The module works well with DPD to achieve -51dBc ACLR using an LTE E-TM1.1 signal with the peak-to-average-power-ratio of 7.1dB. The module occupies only 99cm2. Compact driver stage Doherty circuitry implemented on the multi-layer composite materials PCB contributes both to efficiency enhancement and shrunk foot print.
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