半导体结构空间电荷区电位分布的模拟

SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-04-30 DOI:10.37681/2181-1652-019-x-2021-2-7

S. Utamuradova, E. M. Naurzalieva

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引用次数: 0

摘要

考虑了基于MIS型结构工艺变化的半导体-绝缘体界面特性描述方法。利用Maple软件计算了反转层电荷量、半导体总电荷量、反转层宽度和可控硅半导体总宽度。此外，还得到了这些量与掺杂水平、温度和表面电位的关系

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SIMULATION OF POTENTIAL DISTRIBUTIONS IN THE SPACE CHARGE REGION OF SEMICONDUCTOR STRUCTURES

The methods of description of semiconduc tor-insulator interface characteristics based on process change of MIS type structure was considered. By using Maple Software, the calculations of quantities of inversion layer charge , total charge of semiconductor, inversion layer width and SCR semiconductor total width were m ade. Also, dependence theses quantities from doping level, temperature and surface potential were obtained

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SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS

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