A. Bettidi, A. Cetronio, M. De Dominicis, G. Giolo, C. Lanzieri, A. Manna, M. Peroni, C. Proietti, P. Romanini
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High power GaN-HEMT microwave switches for X-Band and wideband applications
In this article the design, fabrication and test of X-band and 2-18 GHz wideband high power SPDT MMIC switches in GaN technology are presented. Said switches have demonstrated state-of-the-art performance and RF fabrication yields better than 65%. In particular the X-band switch exhibits an on-state power handling capability of better than 37 dBm at the 1 dB insertion loss compression point and the wideband switch shows an insertion loss compression of 1 dB for input power higher than 34.3 dBm in the entire bandwidth.
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