{"title":"部分栅断功率mosfet的漏电流演化","authors":"L. Scheick, L. Selva, Yuan Chen, L. Edmonds","doi":"10.1109/RELPHY.2008.4558968","DOIUrl":null,"url":null,"abstract":"The range of resulting leakage from single-event gate rupture (SEGR) in power MOSFETs spans several decades, from hundreds of nanoamps to tens of milliamps being qualified as rupture events. The differences in the magnitude of the breaks are correlated to the physical and operational effects of the devices investigated. The maximum leakage current that a part may endure and not destroy itself is determined experimentally and analytically.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Current leakage evolution in partially gate-ruptured power MOSFETs\",\"authors\":\"L. Scheick, L. Selva, Yuan Chen, L. Edmonds\",\"doi\":\"10.1109/RELPHY.2008.4558968\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The range of resulting leakage from single-event gate rupture (SEGR) in power MOSFETs spans several decades, from hundreds of nanoamps to tens of milliamps being qualified as rupture events. The differences in the magnitude of the breaks are correlated to the physical and operational effects of the devices investigated. The maximum leakage current that a part may endure and not destroy itself is determined experimentally and analytically.\",\"PeriodicalId\":187696,\"journal\":{\"name\":\"2008 IEEE International Reliability Physics Symposium\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2008.4558968\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4558968","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Current leakage evolution in partially gate-ruptured power MOSFETs
The range of resulting leakage from single-event gate rupture (SEGR) in power MOSFETs spans several decades, from hundreds of nanoamps to tens of milliamps being qualified as rupture events. The differences in the magnitude of the breaks are correlated to the physical and operational effects of the devices investigated. The maximum leakage current that a part may endure and not destroy itself is determined experimentally and analytically.
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