飞秒激光诱导半导体4H-SiC自有序纳米结构

V. Makin, R. S. Makin, I. Silantjeva
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引用次数: 0

摘要

考虑了沿飞秒光束路径在半导体的4H-SiC表面和内部体积中形成亚波长纳米结构沟槽的实验结果。对所观察到的现象的定性解释是基于激光诱导材料损伤的普适极化子模型,该模型是基于激发扩展的圆柱形表面等离子激元极化子及其在半导体圆柱形金属化后与相反波矢量方向的干涉。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Femtosecond laser-induced self-ordered nanostructures in semiconducting 4H-SiC
The experimental results causing the trench of subwavelength nanostructures formation in semiconductor's 4H-SiC surface and inside volume along the femtosecond beam path are considered. The given qualitative explanation of the observed phenomenon is based on universal polariton model of laser-induced material damage with extension of excitation the cylindrical surface plasmon polaritons and their interference with opposite wave vectors directions following the semiconductor's cylindrical rode metallization.
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