PECVD生长中不同底层材料对碳纳米管密度的控制

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI:10.1109/THERMINIC.2013.6675185

Liang Xu, D. Jiang, Yifeng Fu, S. Tu, Johan Liu

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引用次数: 0

摘要

本文提出了一种通过控制Cu衬底厚度来控制碳纳米管生长密度的新方法。Cu的测试厚度从5nm到150nm。在这项工作中，我们尝试了两种阻挡层材料，即Mo和Al2O3来阻止Ni催化剂的扩散。结果表明，Al2O3是一种较好的阻挡层材料，并且比Mo更适合与Cu衬底一起用于控制CNTs的生长密度。最后，本文还对这种通过调节Cu衬底厚度来控制碳纳米管生长密度的新方法进行了尝试性的解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Controlling the density of CNTs by different underlayer materials in PECVD growth

In this paper, we present a new approach of controlling the growth density of carbon nanotubes (CNTs) by controlling the thickness of Cu underlayer. Tested thicknesses of Cu range from 5nm to 150nm. In this work, we have tried two kinds of barrier layer material, namely Mo and Al2O3 against the diffusion of Ni catalysts. The results suggest Al2O3 is a better barrier layer material and more suitable than Mo to be applied with Cu underlayer for the controlling of growth density of CNTs. In the end, this paper also gives a tentative explanation of this new method of controlling CNT growth density by adjusting the thickness of Cu underlayer.

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19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)

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