.18 /spl mu/m 1ghz高速缓存和寄存器阵列的设计验证

D. Malone
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引用次数: 0

摘要

本文介绍了IBM 0.18 /spl mu/m 7LM铜BEOL技术的SRAM原型测试芯片的设计和实验结果。将讨论确保产品在宽工艺范围内的1ghz应用的结果和方法。针对IBM S/390 L2缓存芯片的SRAM应用程序需要多方面的方法来解决以下问题:(i) SRAM在类似产品的时钟和ABIST环境中的可操作性。(ii)利用二维冗余论证产量。(iii)宏观时序规则中使用的SRAM信号的表征。(iv)获得大批量产品前制造测试经验。(v)在技术压力测试条件下验证SRAM功能。IBM 0.18 /spl mu/m技术的原型测试芯片为研究这些领域提供了机会,大大降低了与不断减少的产品设计周期相关的风险,并在类似产品的应用程序中执行SRAM定时规则和逻辑模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design validation of .18 /spl mu/m 1 GHz cache and register arrays
This paper describes the design and results of SRAM experiments from a prototype test chip in IBM's .18 /spl mu/m 7LM copper BEOL technology. Results and approaches for assuring product applications at 1 GHz across wide process ranges will be discussed. Aggressive product cycle time SRAM applications for IBM's S/390 L2 cache chips require multifaceted approaches to address the following: (i) SRAM operability in product-like clocking and ABIST environments. (ii) Demonstration of yield using 2-dimensional redundancy. (iii) Characterization of SRAM signals used in the macro timing rules. (iv) Obtain high volume pre-product manufacturing test experience. (v) Verify SRAM functionality at technology stress test conditions. Prototype test chips in IBM's .18 /spl mu/m technology have provided opportunities to investigate these areas, greatly mitigate risks associated with ever decreasing product design cycles and exercise the SRAM timing rules and logic models in a product-like application.
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