{"title":"碳化硅雪崩二极管增强固态缓冲器的浪涌抑制性能","authors":"K. Koseki, M. Yamamoto, Yasunori Tanaka","doi":"10.1109/APEC39645.2020.9124172","DOIUrl":null,"url":null,"abstract":"A solid-state snubber by a silicon carbide (SiC) p-n junction diode has been fabricated to suppress disturbing effect of surge voltage during turn-off transient of semiconductor devices. The operational performance was evaluated experimentally in a step-down DC/DC converter. As a result, it was found that a wiring inductance between the switching element (metal oxide semiconductor field effect transistor, MOSFET) and the solid-state snubber limits the surge-suppression performance. A co-pack, in which the MOSFET and the solid-state snubber are implemented on a same substrate contiguously, was developed to mitigates the effect by the parasitic inductance. The drastic enhancement in the surge-suppression performance in the co-pack configuration was obtained.","PeriodicalId":171455,"journal":{"name":"2020 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Enhancement of Surge-Suppression Performance of a Solid-State Snubber by a SiC Avalanche-Diode\",\"authors\":\"K. Koseki, M. Yamamoto, Yasunori Tanaka\",\"doi\":\"10.1109/APEC39645.2020.9124172\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A solid-state snubber by a silicon carbide (SiC) p-n junction diode has been fabricated to suppress disturbing effect of surge voltage during turn-off transient of semiconductor devices. The operational performance was evaluated experimentally in a step-down DC/DC converter. As a result, it was found that a wiring inductance between the switching element (metal oxide semiconductor field effect transistor, MOSFET) and the solid-state snubber limits the surge-suppression performance. A co-pack, in which the MOSFET and the solid-state snubber are implemented on a same substrate contiguously, was developed to mitigates the effect by the parasitic inductance. The drastic enhancement in the surge-suppression performance in the co-pack configuration was obtained.\",\"PeriodicalId\":171455,\"journal\":{\"name\":\"2020 IEEE Applied Power Electronics Conference and Exposition (APEC)\",\"volume\":\"115 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Applied Power Electronics Conference and Exposition (APEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEC39645.2020.9124172\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Applied Power Electronics Conference and Exposition (APEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC39645.2020.9124172","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enhancement of Surge-Suppression Performance of a Solid-State Snubber by a SiC Avalanche-Diode
A solid-state snubber by a silicon carbide (SiC) p-n junction diode has been fabricated to suppress disturbing effect of surge voltage during turn-off transient of semiconductor devices. The operational performance was evaluated experimentally in a step-down DC/DC converter. As a result, it was found that a wiring inductance between the switching element (metal oxide semiconductor field effect transistor, MOSFET) and the solid-state snubber limits the surge-suppression performance. A co-pack, in which the MOSFET and the solid-state snubber are implemented on a same substrate contiguously, was developed to mitigates the effect by the parasitic inductance. The drastic enhancement in the surge-suppression performance in the co-pack configuration was obtained.
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