温度相关的直流-直流变换器MOSFET功率损耗建模与优化

2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2013-03-17 DOI:10.1109/APEC.2013.6520692

Xiaoyan Yu, P. Yeaman

{"title":"温度相关的直流-直流变换器MOSFET功率损耗建模与优化","authors":"Xiaoyan Yu, P. Yeaman","doi":"10.1109/APEC.2013.6520692","DOIUrl":null,"url":null,"abstract":"This paper presents a temperature-related, accurate and design-oriented MOSFET power loss model for DC-DC converter. This model aims to quantify the power loss based on the information provided by the data sheets and consequently it can facilitate MOSFET selection and optimization. The proposal MOSFET power loss model is practical and accurate since it combines the merits of the physical-based model, behavior model and analytical model from the standpoint of an industrial design, and also includes temperature effect. Parallel related issues such as positive temperature coefficient check and optimal parallel number for maximum efficiency are also analyzed based on this model. A design example has been given for the power loss modeling and parallel related issues.","PeriodicalId":256756,"journal":{"name":"2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Temperature-related MOSFET power loss modeling and optimization for DC-DC converter\",\"authors\":\"Xiaoyan Yu, P. Yeaman\",\"doi\":\"10.1109/APEC.2013.6520692\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a temperature-related, accurate and design-oriented MOSFET power loss model for DC-DC converter. This model aims to quantify the power loss based on the information provided by the data sheets and consequently it can facilitate MOSFET selection and optimization. The proposal MOSFET power loss model is practical and accurate since it combines the merits of the physical-based model, behavior model and analytical model from the standpoint of an industrial design, and also includes temperature effect. Parallel related issues such as positive temperature coefficient check and optimal parallel number for maximum efficiency are also analyzed based on this model. A design example has been given for the power loss modeling and parallel related issues.\",\"PeriodicalId\":256756,\"journal\":{\"name\":\"2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEC.2013.6520692\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.2013.6520692","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

本文提出了一种与温度相关的、精确的、面向设计的直流-直流变换器MOSFET功率损耗模型。该模型旨在根据数据表提供的信息量化功率损耗，从而便于MOSFET的选择和优化。本文提出的MOSFET功率损耗模型结合了基于物理模型、行为模型和分析模型的优点，从工业设计的角度考虑，并且还包括温度效应，因此具有实用性和准确性。并在此基础上分析了正温度系数校验和效率最大化的最优并行数等并行相关问题。给出了功率损耗建模及相关并行问题的设计实例。

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Temperature-related MOSFET power loss modeling and optimization for DC-DC converter

This paper presents a temperature-related, accurate and design-oriented MOSFET power loss model for DC-DC converter. This model aims to quantify the power loss based on the information provided by the data sheets and consequently it can facilitate MOSFET selection and optimization. The proposal MOSFET power loss model is practical and accurate since it combines the merits of the physical-based model, behavior model and analytical model from the standpoint of an industrial design, and also includes temperature effect. Parallel related issues such as positive temperature coefficient check and optimal parallel number for maximum efficiency are also analyzed based on this model. A design example has been given for the power loss modeling and parallel related issues.

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2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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