纳米线无结绝缘体上硅mosfet:工作特性和电气特性

2015 International Semiconductor Conference (CAS) Pub Date : 2015-12-17 DOI:10.1109/SMICND.2015.7355150

A. Nazarov, T. Rudenko

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引用次数: 2

摘要

在这项工作中，我们概述了无结mosfet的一些特性，例如在重掺杂的窄纳米线通道中增强的电子迁移率，与通道中冲击电离过程相关的器件陡峭的亚阈值斜率，以及主要电特性的提取。对无结MOSFET中随机电报噪声的特殊性质进行了单独评述。

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Nanowire junctionless silicon-on-insulator MOSFETs: Operation features and electrical characterization

In this work we provide an overview of some features of operation junctionless MOSFETs, such as enhanced electron mobility in heavily doped narrow nanowire channels, steep subthreshold slope of such device associated with impact ionization process in the channel, and extraction of main electrical characteristics. Peculiar properties of random telegraph noise in junctionless MOSFET are reviewed separately.

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2015 International Semiconductor Conference (CAS)

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