{"title":"一种w波段(75 ~ 110 GHz)宽带微带移相器","authors":"C. Nguyen, P. Yen","doi":"10.1109/EUMA.1986.334183","DOIUrl":null,"url":null,"abstract":"This paper presents the design and performance of a W-band wideband microstrip 11.25-degree. 1-bit phase shifter using PIN diodes and loaded line technique. State-of-the-art results of 0.9± 0.5 dB insertion loss and ±1.3-degree phase error over the 79 to 92-GHz range have been achieved. Only 1.5 mA per diode and O V are required in the forward and reverse bias states, respectively, for optimum insertion losses. These results demonstrate a significant advance in the millimeter-wave phased array technology.","PeriodicalId":227595,"journal":{"name":"1986 16th European Microwave Conference","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A W-Band (75 to 110 GHz) Broadband Microstrip Phase Shifter\",\"authors\":\"C. Nguyen, P. Yen\",\"doi\":\"10.1109/EUMA.1986.334183\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and performance of a W-band wideband microstrip 11.25-degree. 1-bit phase shifter using PIN diodes and loaded line technique. State-of-the-art results of 0.9± 0.5 dB insertion loss and ±1.3-degree phase error over the 79 to 92-GHz range have been achieved. Only 1.5 mA per diode and O V are required in the forward and reverse bias states, respectively, for optimum insertion losses. These results demonstrate a significant advance in the millimeter-wave phased array technology.\",\"PeriodicalId\":227595,\"journal\":{\"name\":\"1986 16th European Microwave Conference\",\"volume\":\"119 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 16th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1986.334183\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 16th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1986.334183","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A W-Band (75 to 110 GHz) Broadband Microstrip Phase Shifter
This paper presents the design and performance of a W-band wideband microstrip 11.25-degree. 1-bit phase shifter using PIN diodes and loaded line technique. State-of-the-art results of 0.9± 0.5 dB insertion loss and ±1.3-degree phase error over the 79 to 92-GHz range have been achieved. Only 1.5 mA per diode and O V are required in the forward and reverse bias states, respectively, for optimum insertion losses. These results demonstrate a significant advance in the millimeter-wave phased array technology.
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