超结MOSFET电荷不平衡对开关损耗的抑制

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2015-05-10 DOI:10.1109/ISPSD.2015.7123475

Hiroaki Yamashita, Hideyuki Ura, S. Ono, M. Nashiki, Kenji Mii, W. Saito, J. Onodera, Y. Hokomoto

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引用次数: 3

摘要

从MOS栅结构与SJ结构的电荷不平衡(CIB)相互作用的角度讨论了超结- mosfet的开关行为。通过器件仿真分析了SJ-MOSFET的阻性负载开关特性。CIB通过改变栅极附近的电位来改变栅极电压在栅极阈值电压和栅极平台电压之间的瞬态行为。我们找到了决定MOS结构和布局对损耗影响的关键参数，并从开关损耗的角度提出了稳健的MOS栅极设计和布局。最后，通过实验对结论进行了验证。

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Suppression of switching loss dependence on charge imbalance of superjunction MOSFET

We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes the gate voltage transient behavior between gate threshold voltage and gate plateau voltage via modification of the potential near the gate. We found key parameter which determines the effect of MOS structure and layout upon loss, and indicated robust MOS gate design and layout from the perspective of switching loss. Finally, we confirmed the conclusion by experiment.

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2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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