C. Bermond, B. Fléchet, G. Le Carval, F. Charlet, Y. Morand, G. Angénieux, R. Salik
{"title":"高速VLSI电路上先进互连的性能表征","authors":"C. Bermond, B. Fléchet, G. Le Carval, F. Charlet, Y. Morand, G. Angénieux, R. Salik","doi":"10.1109/ESSDERC.2000.194753","DOIUrl":null,"url":null,"abstract":"A full procedure to measure and simulate or predict high speed performance of single or coupled long-lossy IC interconnects is presented. Propagation constant, characteristic impedance and R, L, C, G matrix parameters are extracted from measurements and compared to values obtained by EM modeling. Next, performance in terms of delays, distortion or crosstalk of high speed signals are studied : impacts of low-K dielectrics and Al-Cu or Cu-CMP processes are shown.","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Performance Characterization of Advanced Interconnects on High Speed VLSI Circuits\",\"authors\":\"C. Bermond, B. Fléchet, G. Le Carval, F. Charlet, Y. Morand, G. Angénieux, R. Salik\",\"doi\":\"10.1109/ESSDERC.2000.194753\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A full procedure to measure and simulate or predict high speed performance of single or coupled long-lossy IC interconnects is presented. Propagation constant, characteristic impedance and R, L, C, G matrix parameters are extracted from measurements and compared to values obtained by EM modeling. Next, performance in terms of delays, distortion or crosstalk of high speed signals are studied : impacts of low-K dielectrics and Al-Cu or Cu-CMP processes are shown.\",\"PeriodicalId\":354721,\"journal\":{\"name\":\"30th European Solid-State Device Research Conference\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2000.194753\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194753","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance Characterization of Advanced Interconnects on High Speed VLSI Circuits
A full procedure to measure and simulate or predict high speed performance of single or coupled long-lossy IC interconnects is presented. Propagation constant, characteristic impedance and R, L, C, G matrix parameters are extracted from measurements and compared to values obtained by EM modeling. Next, performance in terms of delays, distortion or crosstalk of high speed signals are studied : impacts of low-K dielectrics and Al-Cu or Cu-CMP processes are shown.