正栅极偏置应力对功率vdmosfet辐射响应的影响

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003359

N. Stojadinovic, S. Djoric-Veljkovic, I. Manic, V. Davidovic, S. Golubovic

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引用次数: 3

摘要

研究了辐照前正栅偏置应力对功率vdmosfet辐射响应的影响。在应力器件中观察到较大的辐照诱导阈值电压位移和迁移率降低，清楚地表明栅极偏置应力不适用于功率vdmosfet的辐射硬化。

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Effects of positive gate bias stress on radiation response in power VDMOSFETs

The effects of pre-irradiation positive gate bias stress on radiation response of power VDMOSFETs have been investigated. Larger irradiation induced threshold voltage shift and mobility reduction in stressed devices have been observed, clearly demonstrating inapplicability of gate bias stressing for radiation hardening of power VDMOSFETs.

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来源期刊

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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