缓冲层位置对光的影响

2017 International Conference on Information, Communication and Engineering (ICICE) Pub Date : 2017-11-01 DOI:10.1109/ICICE.2017.8479163

Y. S. Chang, L. Kao, J. Gong

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引用次数: 0

摘要

调整了n - light的n缓冲层位置，分析了器件特性。提取了器件等效电路的参数，找出了器件改进的原因。通过对不同参数提取方法的比较，发现等势线法的提取精度最高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Effect of Buffer Layer Location on LIGBT

The N-buffer layer location of an N-LIGBT was adjusted, and the device characteristics were analyzed. The parameters of the device equivalent circuit were extracted to find the reason of the device improvement. Different parameter extraction methods were compared, it was found that the equipotential line method is the most accurate one.

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来源期刊

2017 International Conference on Information, Communication and Engineering (ICICE)

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