AlOx/WOy双层RRAM电阻开关过程中氧化还原反应的研究

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839690

Minghao Wu, Huaqiang Wu, Xinyi Li, Ning Deng, H. Qian

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引用次数: 1

摘要

采用脉冲编程测量方法研究了AlOx/WOy双层RRAM器件的SET/RESET过程的突变差异。电学测量结果表明，SET和RESET开关都受外加脉冲幅值的影响。但复位操作与脉冲宽度有很强的关系。计算结果表明，RESET步骤比SET步骤需要更多的能量。需要电场和焦耳加热的结合来完成RESET步骤。提出了一个氧化还原反应模型来解释SET/RESET操作的不对称特性。

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Study of redox reactions in resistive switching processes of AlOx/WOy based bilayer RRAM

Pulsed programming measurements were carried out to study the abrupt differences between the SET/RESET processes of the AlOx/WOy bilayer RRAM devices. Electrical measurement results showed that both SET and RESET switching are affected by the applied pulse amplitude. But the RESET operation has a strong relation with the pulse width. Calculation results indicate the RESET step needs more energy than the SET step. A combination of electrical field and joule heating is needed to complete the RESET step. A redox reaction model is proposed to explain the asymmetry characteristic of the SET/RESET operations.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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