CoolMOS/sup TM/在420 K和80 K之间的性能-低温应用的理想设备

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764063

A. Schlogl, G. Deboy, H. W. Lorenzen, U. Linnert, H. Schulze, J. Stengl

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引用次数: 13

摘要

基于电荷补偿概念的新一代功率mosfet的第一个代表CoolMOS/sup TM/在80 K至423 K的温度范围内进行了电学性能研究。由于它结合了mosfet的所有优点，因此可以实现更高的电流密度，因此该器件不仅对环境温度下的电力电子系统非常有吸引力，而且对低温温度T>77 K也非常有吸引力。

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Properties of CoolMOS/sup TM/ between 420 K and 80 K-the ideal device for cryogenic applications

The electrical properties of CoolMOS/sup TM/, the first representative of a new generation of power MOSFETs, based on the concept of charge compensation, were investigated at temperatures between 80 K and 423 K. Since it unifies all the advantages of MOSFETs, where additionally higher current densities are possible, the device is not only very attractive for power electronic systems at ambient temperatures, but also for cryogenic temperatures T>77 K.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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