金属栅电极对TDDB在HfSiON栅介质中威布尔分布的影响

2009 IEEE International Reliability Physics Symposium Pub Date : 2009-04-26 DOI:10.1109/IRPS.2009.5173278

I. Hirano, Y. Nakasaki, S. Fukatsu, Akiko Masada, Y. Mitani, M. Goto, K. Nagatomo, S. Inumiya, K. Sekine

{"title":"金属栅电极对TDDB在HfSiON栅介质中威布尔分布的影响","authors":"I. Hirano, Y. Nakasaki, S. Fukatsu, Akiko Masada, Y. Mitani, M. Goto, K. Nagatomo, S. Inumiya, K. Sekine","doi":"10.1109/IRPS.2009.5173278","DOIUrl":null,"url":null,"abstract":"The slope parameter of Weibull plot of Tbd, β, strongly depends on gate electrode material for metalgate/HfSiON gate stacks in n-FETs. Furthermore β of Tbd under bipolar stress is larger than that under DC stress. From these results, it is found that the balance of injected carriers is strongly related to β in terms of the origin of large β for metal-gate/high-k.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Impact of metal gate electrode on Weibull distribution of TDDB in HfSiON gate dielectrics\",\"authors\":\"I. Hirano, Y. Nakasaki, S. Fukatsu, Akiko Masada, Y. Mitani, M. Goto, K. Nagatomo, S. Inumiya, K. Sekine\",\"doi\":\"10.1109/IRPS.2009.5173278\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The slope parameter of Weibull plot of Tbd, β, strongly depends on gate electrode material for metalgate/HfSiON gate stacks in n-FETs. Furthermore β of Tbd under bipolar stress is larger than that under DC stress. From these results, it is found that the balance of injected carriers is strongly related to β in terms of the origin of large β for metal-gate/high-k.\",\"PeriodicalId\":345860,\"journal\":{\"name\":\"2009 IEEE International Reliability Physics Symposium\",\"volume\":\"93 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2009.5173278\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2009.5173278","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

在n- fet中，金属栅极/HfSiON栅极堆的栅极电极材料对Weibull图斜率参数β有很大的影响。双极应力下Tbd的β值大于直流应力。从这些结果可以看出，就金属栅/高k的大β的来源而言，注入载流子的平衡与β密切相关。

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Impact of metal gate electrode on Weibull distribution of TDDB in HfSiON gate dielectrics

The slope parameter of Weibull plot of Tbd, β, strongly depends on gate electrode material for metalgate/HfSiON gate stacks in n-FETs. Furthermore β of Tbd under bipolar stress is larger than that under DC stress. From these results, it is found that the balance of injected carriers is strongly related to β in terms of the origin of large β for metal-gate/high-k.

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2009 IEEE International Reliability Physics Symposium

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