光泵浦半导体光盘激光器复杂非对称多量子阱的能带工程

2010 10th International Conference on Laser and Fiber-Optical Networks Modeling Pub Date : 2010-11-09 DOI:10.1109/LFNM.2010.5624179

O. Shulika, I. Sukhoivanov, M. Klymenko, I. M. Safonov, J. Lucio, A. G. Pérez, R. Rojas‐Laguna

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引用次数: 0

摘要

利用波函数工程技术在GaAs/AlGaAs材料体系中设计了光泵浦半导体光盘激光器(OPS-DLs)的非对称多量子阱有源区，同时提供了良好的电子约束、大增益和有效的载流子输运。实验研究表明，这种方法在opsdl之间的转换效率和输出功率方面都达到了创纪录的水平。

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Band engineering of complex asymmetric multiple quantum wells for optically pumped semiconductor disk lasers

Asymmetric multiple quantum well active regions for optically-pumped semiconductor disk lasers (OPS-DLs) are designed employing wave function engineering within GaAs/AlGaAs material system, which provide simultaneously good electronic confinement, large gain and effective carrier transport. Experimental investigation has shown that such an approach gives record values of the conversion efficiency among OPSDLs and provides high values of the output power.

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2010 10th International Conference on Laser and Fiber-Optical Networks Modeling

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