R. Yan, K. Lee, D. Jeon, Y.O. Kim, B. Park, M. Pinto, C. Rafferty, D. Tennant, E. Westerwick, G. Chin, M. Morris, K. Early, P. Mulgrew, W. Mansfield, R. Watts, A.M. Voshchenkov, J. Bokor, R. Swartz, A. Ourmazd
{"title":"高性能0.1 μ m室温硅mosfet","authors":"R. Yan, K. Lee, D. Jeon, Y.O. Kim, B. Park, M. Pinto, C. Rafferty, D. Tennant, E. Westerwick, G. Chin, M. Morris, K. Early, P. Mulgrew, W. Mansfield, R. Watts, A.M. Voshchenkov, J. Bokor, R. Swartz, A. Ourmazd","doi":"10.1109/VLSIT.1992.200661","DOIUrl":null,"url":null,"abstract":"The design and implementation of 0.15- mu m-channel N-MOSFETs with very high current drive and good short channel behavior at room temperature are discussed. Measured subthreshold characteristics show a slope of 84 mV/dec and a shift for 75 mV for Delta V/sub ds/=1 V. A peak g/sub m/ of 570 mS/mm was recorded, leading to a unity-current-gain cutoff frequency (f/sub T/) of 89 GHz. Key process steps include the formation of 40-AA gate oxides and sub-500-AA junctions. Vertical doping engineering was used to minimize doping at the surface and beneath the junctions, while maintaining good turn-off characteristics.<<ETX>>","PeriodicalId":404756,"journal":{"name":"1992 Symposium on VLSI Technology Digest of Technical Papers","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"High performance 0.1- mu m room temperature Si MOSFETs\",\"authors\":\"R. Yan, K. Lee, D. Jeon, Y.O. Kim, B. Park, M. Pinto, C. Rafferty, D. Tennant, E. Westerwick, G. Chin, M. Morris, K. Early, P. Mulgrew, W. Mansfield, R. Watts, A.M. Voshchenkov, J. Bokor, R. Swartz, A. Ourmazd\",\"doi\":\"10.1109/VLSIT.1992.200661\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and implementation of 0.15- mu m-channel N-MOSFETs with very high current drive and good short channel behavior at room temperature are discussed. Measured subthreshold characteristics show a slope of 84 mV/dec and a shift for 75 mV for Delta V/sub ds/=1 V. A peak g/sub m/ of 570 mS/mm was recorded, leading to a unity-current-gain cutoff frequency (f/sub T/) of 89 GHz. Key process steps include the formation of 40-AA gate oxides and sub-500-AA junctions. Vertical doping engineering was used to minimize doping at the surface and beneath the junctions, while maintaining good turn-off characteristics.<<ETX>>\",\"PeriodicalId\":404756,\"journal\":{\"name\":\"1992 Symposium on VLSI Technology Digest of Technical Papers\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 Symposium on VLSI Technology Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1992.200661\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 Symposium on VLSI Technology Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1992.200661","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance 0.1- mu m room temperature Si MOSFETs
The design and implementation of 0.15- mu m-channel N-MOSFETs with very high current drive and good short channel behavior at room temperature are discussed. Measured subthreshold characteristics show a slope of 84 mV/dec and a shift for 75 mV for Delta V/sub ds/=1 V. A peak g/sub m/ of 570 mS/mm was recorded, leading to a unity-current-gain cutoff frequency (f/sub T/) of 89 GHz. Key process steps include the formation of 40-AA gate oxides and sub-500-AA junctions. Vertical doping engineering was used to minimize doping at the surface and beneath the junctions, while maintaining good turn-off characteristics.<>
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