不同沉积温度制备纳米四足氧化锌薄膜的电学和结构特性

2014 International Symposium on Technology Management and Emerging Technologies Pub Date : 2014-05-27 DOI:10.1109/ISTMET.2014.6936504

N. Azhar, S. S. Shariffudin, I. H. Affendi, A. Shafura, I. Saurdi, A. Ishak, M. Rusop

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引用次数: 2

摘要

采用热化学气相沉积(TCVD)技术制备了纳米四足氧化锌(ZnO)薄膜。在700°C和800°C下沉积薄膜，研究温度对纳米四足体ZnO薄膜物理性能的影响。XRD结果表明，在700°C(002)取向时，可以观察到峰。结果表明，随着沉积温度的升高，纳米四足体的尺寸逐渐增大。能量色散x射线能谱仪(EDX)表明，生长产物仅含锌和氧。在800°C时，薄膜的最小电阻率为1.10欧姆。厘米。由于氧空位缺陷和ZnO纳米四足体的结晶，在380 nm处有明显的紫外峰和700℃处有高强度的可见光峰。

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Electrical and structural properties of nanotetrapod zinc oxide thin films prepared with different deposition temperature

Nanotetrapod zinc oxide (ZnO) thin films have been deposited by thermal chemical vapor deposition (TCVD) technique. The films were deposited at 700°C and 800°C to study the temperature effect of physical properties of the nanotetrapod ZnO thin films. From XRD result shows the highest peak can observed from sample 700°C at (002) orientation. It was found that the size of nanotetrapod increased with increased of deposition temperature. The energy dispersive X-ray spectrometer (EDX) spectrum shows that the grown product contains zinc and oxygen only. At 800°C show the minimum of resistivity for the thin film which is 1.10 ohm. cm. Photoluminescence measurement shows a sharp peak ultraviolet emission at 380 nm and high intensity visible peak at 700°C because of defect due to oxygen vacancy and crystallization of ZnO nanotetrapod.

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2014 International Symposium on Technology Management and Emerging Technologies

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