针对特定应用的dram的替代锤击测试和工业案例研究

Rei-Fu Huang, Hao-Yu Yang, M. Chao, Shih-Chin Lin
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引用次数: 21

摘要

本文提出了一种新的内存测试算法——交替锤击测试,用于检测特定应用的双字行锤击故障。与以往需要过长的测试时间的锤击测试不同,交替锤击测试通过考虑潜在故障点的阵列布局和实际系统应用中最高的DRAM访问频率,设计成可扩展到工业DRAM阵列。通过对嵌入在存储应用SoC中的eDRAM宏的测试应用,验证了所提出的替代锤击测试的有效性和效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Alternate hammering test for application-specific DRAMs and an industrial case study
This paper presents a novel memory test algorithm, named alternate hammering test, to detect the pairwise word-line hammering faults for application-specific DRAMs. Unlike previous hammering tests, which require excessively long test time, the alternate hammering test is designed scalable to industrial DRAM arrays by considering the array layout for potential fault sites and the highest DRAM-access frequency in real system applications. The effectiveness and efficiency of the proposed alternate hammering test are validated through the test application to an eDRAM macro embedded in a storage-application SoC.
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