化学喷雾热解法制备透明导电FTO薄膜及表征

E. Eqbal, E. Rahman, E. I. Anila
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引用次数: 1

摘要

采用化学喷雾热解法在玻璃基板上制备了氟掺杂氧化锡(FTO)薄膜。%, 15 at。%, 20 at。%氟掺杂浓度。研究了它们的结构、光学和电学性质。x射线衍射(XRD)研究表明薄膜具有多晶性质,具有正交晶型结构。在14 ~ 30 nm范围内观察到晶粒尺寸(D)。FTO薄膜的FESEM图像显示,FTO薄膜表面形貌光滑均匀,表面分布着细小的颗粒状颗粒。EDX分析证实了制备的FTO薄膜中存在Sn、O和F元素。光致发光(PL)光谱显示出380 nm和620 nm区域的宽发射,包括近带边缘(NBE)和深能级发射(DLE)。通过霍尔效应测量,观察到所有薄膜都表现出n型电导率。样品以10at的速度生长。%的氟表现出最高的透射率(80%),具有高迁移率和导电性,这是TCO的基本要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preparation and Characterization of Transparent Conducting FTO Thin Films by Chemical Spray Pyrolysis Method
Fluorine doped tin oxide (FTO) thin films were synthesized by chemical spray pyrolysis method on glass substrates for 10 at.%, 15 at.%, 20 at.% of fluorine doping concentrations. Their structural, optical and electrical properties were investigated. X-ray diffraction (XRD) study shows polycrystalline nature of the films with orthorhombic crystal structure. The grain size (D) was observed in the range of 14 nm to 30 nm. The FESEM images of the FTO thin films reveals that the films have smooth and homogeneous surface morphology with thin granular grains distributed throughout the surface. EDX analysis confirms the presence of Sn, O and F elements in the prepared FTO thin films. Photoluminescence (PL) spectrum shows a broad emission which covers near band edge (NBE) as well as deep level emissions (DLE) in the region 380 nm and 620 nm. From the hall effect measurements, it was observed that all the films exhibit n-type conductivity. The sample grown with 10 at. % of fluorine showed the highest transmission percentage (80%) with high mobility and conductivity, which are basic requirements for a TCO.
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