{"title":"超低损耗沟栅PCI-PiN二极管，VF<350mV","authors":"M. Tsuda, Y. Matsumoto, I. Omura","doi":"10.1109/ISPSD.2011.5890796","DOIUrl":null,"url":null,"abstract":"PiN diode forward voltage drop was reduced to as low as 325mV by the pulsed carrier injection (PCI) mechanism with trench MOS gate as the integrated injection control switch. The conventional PiN diodes have voltage drop of about 0.8V which is equivalent to 1%–2% energy loss in home appliances. The proposed PCI-PiN diode reduces the loss by more than 50% and the diode structure has process compatibility to conventional IGBTs and trench MOSFETs for easy implementation into mass production. The authors also confirmed PCI concept with the experiment with BSIT.","PeriodicalId":132504,"journal":{"name":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultra low loss trench gate PCI-PiN diode with VF<350mV\",\"authors\":\"M. Tsuda, Y. Matsumoto, I. Omura\",\"doi\":\"10.1109/ISPSD.2011.5890796\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"PiN diode forward voltage drop was reduced to as low as 325mV by the pulsed carrier injection (PCI) mechanism with trench MOS gate as the integrated injection control switch. The conventional PiN diodes have voltage drop of about 0.8V which is equivalent to 1%–2% energy loss in home appliances. The proposed PCI-PiN diode reduces the loss by more than 50% and the diode structure has process compatibility to conventional IGBTs and trench MOSFETs for easy implementation into mass production. The authors also confirmed PCI concept with the experiment with BSIT.\",\"PeriodicalId\":132504,\"journal\":{\"name\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2011.5890796\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2011.5890796","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra low loss trench gate PCI-PiN diode with VF<350mV
PiN diode forward voltage drop was reduced to as low as 325mV by the pulsed carrier injection (PCI) mechanism with trench MOS gate as the integrated injection control switch. The conventional PiN diodes have voltage drop of about 0.8V which is equivalent to 1%–2% energy loss in home appliances. The proposed PCI-PiN diode reduces the loss by more than 50% and the diode structure has process compatibility to conventional IGBTs and trench MOSFETs for easy implementation into mass production. The authors also confirmed PCI concept with the experiment with BSIT.
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