S波段宽带RF LDMOS具有优异的性能

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628078

Ting Yu, Zhiqing Qiu

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引用次数: 3

摘要

本文演示了在2.5 GHz频段具有16.5dB增益、~60%效率和1.26W/mm高功率密度的RF LDMOS器件。介绍了器件的基本结构，并建立了负载拉试验装置，对其射频性能进行了评价。此外，热载流子注入(HCI)问题被抑制到可以忽略不计的水平(在外推的20年中小于5%)。通过表征器件在1GHz和2.3至2.5 GHz范围内的射频性能来研究宽带特性。换能器的增益和效率都有很大提高，这与小信号S参数测试结果所显示的趋势一致。射频测试结果表明，该宽带S波段射频LDMOS晶体管性能优异。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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S band broadband RF LDMOS with excellent performance

In this paper, RF LDMOS devices with gain of 16.5dB, high efficiency (~60%) and high power density (1.26W/mm) at 2.5 GHz is demonstrated. The basic device structure is described and the load pull test setup was put up to evaluate its RF performance. Moreover, the Hot Carrier Injection (HCI) issue is suppressed to a negligible level (less than 5% over the extrapolated 20 years). The broadband property is investigated by characterizing the device's RF performance at 1GHz and also at a range among 2.3 to 2.5 GHz. The transducer gain and efficiency are greatly improved which is consistent with trend indicated by the small signal S parameter test result. The RF test results show us a broadband S band RF LDMOS transistor with excellent performance.

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来源期刊

2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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