GaAs集成电路中泄漏电流的稳态和瞬态特性分析

Proceedings of the 7th Conference on Semi-insulating III-V Materials, Pub Date : 1992-04-21 DOI:10.1109/SIM.1992.752718

J. Gual, J. Samitier, J. Morante

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引用次数: 0

摘要

我们报告了一个通用模型，使我们能够分析和模拟III-V集成电路中近器件之间的泄漏电流的稳态和瞬态行为。该模型假定存在一个非线性的生成复合过程，即深阱的冲击电离，导致高阻态和导电态之间的非平衡相变。

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Analysis of the steady and transient characteristics of the leakage current in GaAs integrated circuits

We report a general model that allow us to analyze and simulate the steady and transient behavior of the leakage current between near devices in III-V integrated circuits. The model assumes the existence of a non-linear generation recombination process, impact ionization of deep traps, causing a non-equilibrium phase transition between a high resistive state and a conductive one.

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Proceedings of the 7th Conference on Semi-insulating III-V Materials,

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