探索npn和pnp SiGe hts中的热载流子现象

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI:10.1109/SMIC.2008.20

P. Cheng, A. Appaswamy, M. Bellini, J. Cressler

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引用次数: 4

摘要

提出了一种分析冲击电离诱导应力下热电子击穿和热孔损伤的新方法。测量表明，在混合模式应力下，电子比空穴更有效地产生碰撞电离引起的损伤。使用这种方法可以直接观察到幸运电子和幸运空穴，并且诱导的热载流子电流对理解SiGe HBTs在侵蚀应力下的可靠性提供了重要的见解。

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Probing Hot Carrier Phenomena in npn and pnp SiGe HBTs

A new method for analyzing breakdown phenomena and differentiating between damage created by hot electrons and hot holes under impact ionization induced stress within SiGe HBTs is presented. Measurements demonstrate that electrons are more effective than holes for creating impact ionization induced damage under mixed-mode stress. Lucky electrons and lucky holes can be directly observed using this approach, and the induced hot carrier current yields important insight into understanding reliability of SiGe HBTs under aggressive stress.

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来源期刊

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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