{"title":"晶体管放大器的简单分析方法","authors":"B. Wilamowski, J. Irwin","doi":"10.1201/B10602-21","DOIUrl":null,"url":null,"abstract":"The traditional approach to the small-signal analysis of transistor amplifiers employs the transistor models with dependent sources, illustrated in Figure 18.1, for both the MOS and BJT devices. In this chapter, techniques for the analysis of transistor circuits will be demonstrated without the use of a small-signal equivalent circuit containing dependent sources. Because of the similarities inherent in the two circuit configurations shown in Figure 18.1, the following analyses will address both MOS and BJT devices in unison. As a general rule, the small signal parameters are calculated as a function of the transistor currents. In view of that fact, consider now each type of device.","PeriodicalId":354437,"journal":{"name":"Fundamentals of Industrial Electronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Simplistic Approach to the Analysis of Transistor Amplifiers\",\"authors\":\"B. Wilamowski, J. Irwin\",\"doi\":\"10.1201/B10602-21\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The traditional approach to the small-signal analysis of transistor amplifiers employs the transistor models with dependent sources, illustrated in Figure 18.1, for both the MOS and BJT devices. In this chapter, techniques for the analysis of transistor circuits will be demonstrated without the use of a small-signal equivalent circuit containing dependent sources. Because of the similarities inherent in the two circuit configurations shown in Figure 18.1, the following analyses will address both MOS and BJT devices in unison. As a general rule, the small signal parameters are calculated as a function of the transistor currents. In view of that fact, consider now each type of device.\",\"PeriodicalId\":354437,\"journal\":{\"name\":\"Fundamentals of Industrial Electronics\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-03-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Fundamentals of Industrial Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1201/B10602-21\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fundamentals of Industrial Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1201/B10602-21","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Simplistic Approach to the Analysis of Transistor Amplifiers
The traditional approach to the small-signal analysis of transistor amplifiers employs the transistor models with dependent sources, illustrated in Figure 18.1, for both the MOS and BJT devices. In this chapter, techniques for the analysis of transistor circuits will be demonstrated without the use of a small-signal equivalent circuit containing dependent sources. Because of the similarities inherent in the two circuit configurations shown in Figure 18.1, the following analyses will address both MOS and BJT devices in unison. As a general rule, the small signal parameters are calculated as a function of the transistor currents. In view of that fact, consider now each type of device.