晶体管放大器的简单分析方法

B. Wilamowski, J. Irwin
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摘要

对于MOS和BJT器件,晶体管放大器的小信号分析的传统方法采用具有依赖源的晶体管模型,如图18.1所示。在本章中,分析晶体管电路的技术将在不使用包含相关源的小信号等效电路的情况下进行演示。由于图18.1所示的两种电路配置中固有的相似性,下面的分析将同时处理MOS和BJT器件。一般来说,小信号参数是作为晶体管电流的函数来计算的。鉴于这一事实,现在考虑每一种类型的设备。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Simplistic Approach to the Analysis of Transistor Amplifiers
The traditional approach to the small-signal analysis of transistor amplifiers employs the transistor models with dependent sources, illustrated in Figure 18.1, for both the MOS and BJT devices. In this chapter, techniques for the analysis of transistor circuits will be demonstrated without the use of a small-signal equivalent circuit containing dependent sources. Because of the similarities inherent in the two circuit configurations shown in Figure 18.1, the following analyses will address both MOS and BJT devices in unison. As a general rule, the small signal parameters are calculated as a function of the transistor currents. In view of that fact, consider now each type of device.
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