大功率毫米波平面倍频器

G. Tan, Gabriel M. Rebeiz
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引用次数: 7

摘要

本文介绍了两种不同的平面毫米波倍频器设计。倍频器是由两个肖特基变容二极管串联而成的,用于高功率工作。高Q设计(Q=6)导致在72-73 GHz输出频率下的转换损耗为6.4 dB。低Q设计(Q=1.6)导致64-78 GHz在-2 V偏置下的转换损耗为9.6/spl plusmn/0.7 dB,并且在74 GHz时输出71 mW,输入功率为490 mW(转换损耗为8.4 dB,最佳偏置为-7 V)。输出功率没有饱和迹象,由于输入源功率限制在71 mW。结果被引用为“片上”,是毫米波平面乘法器的最新技术。应用领域为汽车防撞雷达和毫米波通信系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-power millimeter-wave planar doublers
This paper presents two different planar doubler designs for MM-wave applications. The doublers are fabricated using two Schottky varactor diodes in series for high power operation. The high-Q design (Q=6) results in a conversion loss of 6.4 dB at an output frequency of 72-73 GHz. The low-Q design (Q=1.6) results in a conversion loss of 9.6/spl plusmn/0.7 dB from 64-78 GHz at -2 V bias, and delivers 71 mW at 74 GHz for an input power of 490 mW (conversion loss of 8.4 dB, at optimal bias of -7 V). The output power shows no sign of saturation, and is limited to 71 mW due to the input source power. The results are quoted "on-chip" and are state of the art for MM-wave planar multipliers. The application areas are in automotive collision avoidance radars and MM-wave communication systems.
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