Ziyuan Liu, T. Saito, T. Matsuda, K. Ando, Shu Ito, M. Wilde, K. Fukutani
{"title":"氢在氧化物-氮氧化物堆叠中的分布及其与MONOS存储器数据保留的关系","authors":"Ziyuan Liu, T. Saito, T. Matsuda, K. Ando, Shu Ito, M. Wilde, K. Fukutani","doi":"10.1109/RELPHY.2008.4558998","DOIUrl":null,"url":null,"abstract":"We demonstrate that hydrogen (H) atom penetration into the bottom oxide (BTO) of ONO stacks degrades the retention reliability of MONOS memory. We observe that post-nitride (SiN) N2-annealing improves the retention through a suppression of the H atom diffusion in ONO stacks. Nuclear reaction analysis revealed the presence of an ultra thin H-storage layer in the top oxide/SiN interface, which can effectively shield the BTO from H diffusion, and in turn provides H species resistant against energetic electron damage.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Hydrogen distribution in oxide-nitride-oxide stacks and correlation with data retention of MONOS memories\",\"authors\":\"Ziyuan Liu, T. Saito, T. Matsuda, K. Ando, Shu Ito, M. Wilde, K. Fukutani\",\"doi\":\"10.1109/RELPHY.2008.4558998\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate that hydrogen (H) atom penetration into the bottom oxide (BTO) of ONO stacks degrades the retention reliability of MONOS memory. We observe that post-nitride (SiN) N2-annealing improves the retention through a suppression of the H atom diffusion in ONO stacks. Nuclear reaction analysis revealed the presence of an ultra thin H-storage layer in the top oxide/SiN interface, which can effectively shield the BTO from H diffusion, and in turn provides H species resistant against energetic electron damage.\",\"PeriodicalId\":187696,\"journal\":{\"name\":\"2008 IEEE International Reliability Physics Symposium\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2008.4558998\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4558998","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hydrogen distribution in oxide-nitride-oxide stacks and correlation with data retention of MONOS memories
We demonstrate that hydrogen (H) atom penetration into the bottom oxide (BTO) of ONO stacks degrades the retention reliability of MONOS memory. We observe that post-nitride (SiN) N2-annealing improves the retention through a suppression of the H atom diffusion in ONO stacks. Nuclear reaction analysis revealed the presence of an ultra thin H-storage layer in the top oxide/SiN interface, which can effectively shield the BTO from H diffusion, and in turn provides H species resistant against energetic electron damage.
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