慢波模式下GS-TSV的电特性

2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS) Pub Date : 2017-12-01 DOI:10.1109/EDAPS.2017.8277028

Fengjuan Wang, G. Wang, N. Yu

{"title":"慢波模式下GS-TSV的电特性","authors":"Fengjuan Wang, G. Wang, N. Yu","doi":"10.1109/EDAPS.2017.8277028","DOIUrl":null,"url":null,"abstract":"The electrical characteristics of signal-ground through-silicon-via (GS-TSV) in slow-wave mode are analyzed according to microwave theory and simulated by ADS software. The results show that with the increasing radius of TSV, the transmission characteristic is getting better and better, however, with increasing height of TSV, the transmission characteristic of TSV becomes worse within the range from 0 to 15GHz.","PeriodicalId":329279,"journal":{"name":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical characteristics of GS-TSV in slow wave mode\",\"authors\":\"Fengjuan Wang, G. Wang, N. Yu\",\"doi\":\"10.1109/EDAPS.2017.8277028\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical characteristics of signal-ground through-silicon-via (GS-TSV) in slow-wave mode are analyzed according to microwave theory and simulated by ADS software. The results show that with the increasing radius of TSV, the transmission characteristic is getting better and better, however, with increasing height of TSV, the transmission characteristic of TSV becomes worse within the range from 0 to 15GHz.\",\"PeriodicalId\":329279,\"journal\":{\"name\":\"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDAPS.2017.8277028\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDAPS.2017.8277028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

根据微波理论分析了慢波模式下信号接地通硅孔(GS-TSV)的电特性，并利用ADS软件进行了仿真。结果表明:在0 ~ 15GHz范围内，随着TSV半径的增加，TSV的传输特性越来越好，但随着TSV高度的增加，TSV的传输特性变得越来越差。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Electrical characteristics of GS-TSV in slow wave mode

The electrical characteristics of signal-ground through-silicon-via (GS-TSV) in slow-wave mode are analyzed according to microwave theory and simulated by ADS software. The results show that with the increasing radius of TSV, the transmission characteristic is getting better and better, however, with increasing height of TSV, the transmission characteristic of TSV becomes worse within the range from 0 to 15GHz.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)

自引率

0.00%

发文量