1200V PT簇绝缘栅双极晶体管的零电压开关

M. Sweet, J. Nicholls, K. Vershinin, O. Spulber, L. Ngwendson, E. M. Sankara Narayanan
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引用次数: 2

摘要

本文首次报道了1.2kV脉冲通过簇绝缘栅双极晶体管的零电压开关性能。在零电压开关工作条件下的实验分析表明,即使发生显著的瞬态过电压,也可以在所有考虑的温度下减少20%的“接通”能量损失。这种影响在静态IV特性中没有看到,而是由于井间距较短
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Zero Voltage Switching of a 1200V PT Clustered Insulated Gate Bipolar Transistor
For the first time the zero voltage switching performance of a 1.2kV punch through clustered insulated gate bipolar transistor is reported. Experimental analysis under a zero voltage switching operating condition shows a reduction in `on' energy losses of 20% for all temperatures considered, even though significant transient over-voltages occur. This effect is not seen in the static IV characteristics and is shown to be as a result of a short p well-to-p well spacing
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