{"title":"低阈值Ingas/gaas应变层表面发射激光器与两个45/spl度/角度蚀刻全反射镜","authors":"C. Chao, K. Law, J. Merz","doi":"10.1109/DRC.1991.664667","DOIUrl":null,"url":null,"abstract":"Summary form only given. An InGaAs/GaAs strained-layer IPSEL (in-plane surface emitting laser) structure with two 45 degrees dry-etched mirrors and a highly reflecting bottom quarter-wavelength stack is reported. It has a record low continuous-wave (CW) threshold current at 10 mA. The laser structure consists of a conventional double-heterostructure single-quantum-well (80-AA In/sub 0.2/Ga/sub 0.8/As/100-AA GaAs) laser structure on top of a quarter-wave stack (25 pairs of 695-AA GaAs/830-AA AlAs), which serves as a distributed Bragg reflector ( approximately 99%) after 45 degrees angle etching. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-threshold Ingas/gaas Strained-layer Surface Emitting Lasers With Two 45/spl deg/ Angle Etched Total Reflection Mirrors\",\"authors\":\"C. Chao, K. Law, J. Merz\",\"doi\":\"10.1109/DRC.1991.664667\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. An InGaAs/GaAs strained-layer IPSEL (in-plane surface emitting laser) structure with two 45 degrees dry-etched mirrors and a highly reflecting bottom quarter-wavelength stack is reported. It has a record low continuous-wave (CW) threshold current at 10 mA. The laser structure consists of a conventional double-heterostructure single-quantum-well (80-AA In/sub 0.2/Ga/sub 0.8/As/100-AA GaAs) laser structure on top of a quarter-wave stack (25 pairs of 695-AA GaAs/830-AA AlAs), which serves as a distributed Bragg reflector ( approximately 99%) after 45 degrees angle etching. >\",\"PeriodicalId\":269691,\"journal\":{\"name\":\"[1991] 49th Annual Device Research Conference Digest\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] 49th Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1991.664667\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] 49th Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1991.664667","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-threshold Ingas/gaas Strained-layer Surface Emitting Lasers With Two 45/spl deg/ Angle Etched Total Reflection Mirrors
Summary form only given. An InGaAs/GaAs strained-layer IPSEL (in-plane surface emitting laser) structure with two 45 degrees dry-etched mirrors and a highly reflecting bottom quarter-wavelength stack is reported. It has a record low continuous-wave (CW) threshold current at 10 mA. The laser structure consists of a conventional double-heterostructure single-quantum-well (80-AA In/sub 0.2/Ga/sub 0.8/As/100-AA GaAs) laser structure on top of a quarter-wave stack (25 pairs of 695-AA GaAs/830-AA AlAs), which serves as a distributed Bragg reflector ( approximately 99%) after 45 degrees angle etching. >
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