{"title":"基于32ghz 20dbm - psat变压器的Doherty功率放大器，用于28nm块状CMOS中多gb /s 5G应用","authors":"P. Indirayanti, P. Reynaert","doi":"10.1109/RFIC.2017.7969013","DOIUrl":null,"url":null,"abstract":"This paper presents a 32 GHz transformer-based Doherty power amplifier (PA) in a 28 nm bulk CMOS process. There are two techniques proposed: linearization by means of AM-PM and AM-AM compensation of the class AB and the class C amplifiers; and parallel-series-parallel power power combiner, wherein a current-mode parallel combiner complements the Doherty's voltage-mode series combiner to boost the output power. A saturated output power (PSAT ) of 19.8 dBm and an OP1dB of 16 dBm are accomplished from 1V supply while supporting 15 Gb/s 64-QAM amplification at 11.7 dBm average output power. The chip achieves 21% PAE at PSAT and occupies 0.59 mm2 active area.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"53","resultStr":"{\"title\":\"A 32 GHz 20 dBm-PSAT transformer-based Doherty power amplifier for multi-Gb/s 5G applications in 28 nm bulk CMOS\",\"authors\":\"P. Indirayanti, P. Reynaert\",\"doi\":\"10.1109/RFIC.2017.7969013\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 32 GHz transformer-based Doherty power amplifier (PA) in a 28 nm bulk CMOS process. There are two techniques proposed: linearization by means of AM-PM and AM-AM compensation of the class AB and the class C amplifiers; and parallel-series-parallel power power combiner, wherein a current-mode parallel combiner complements the Doherty's voltage-mode series combiner to boost the output power. A saturated output power (PSAT ) of 19.8 dBm and an OP1dB of 16 dBm are accomplished from 1V supply while supporting 15 Gb/s 64-QAM amplification at 11.7 dBm average output power. The chip achieves 21% PAE at PSAT and occupies 0.59 mm2 active area.\",\"PeriodicalId\":349922,\"journal\":{\"name\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"53\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2017.7969013\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969013","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 32 GHz 20 dBm-PSAT transformer-based Doherty power amplifier for multi-Gb/s 5G applications in 28 nm bulk CMOS
This paper presents a 32 GHz transformer-based Doherty power amplifier (PA) in a 28 nm bulk CMOS process. There are two techniques proposed: linearization by means of AM-PM and AM-AM compensation of the class AB and the class C amplifiers; and parallel-series-parallel power power combiner, wherein a current-mode parallel combiner complements the Doherty's voltage-mode series combiner to boost the output power. A saturated output power (PSAT ) of 19.8 dBm and an OP1dB of 16 dBm are accomplished from 1V supply while supporting 15 Gb/s 64-QAM amplification at 11.7 dBm average output power. The chip achieves 21% PAE at PSAT and occupies 0.59 mm2 active area.
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