谐波阻抗对SiGe hbt线性度影响的一般分析

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365742

Q. Liang, J. Andrews, J. Cressler, G. Niu

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引用次数: 1

摘要

利用谐波阻抗控制技术对晶体管线性度进行了全面的研究，并将其应用于SiGe hbt中互调失真的通用优化方法。谐波负载-拉力仿真和实测结果验证了该优化方法的有效性。

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General analysis of the impact of harmonic impedance on linearity in SiGe HBTs

A comprehensive study of transistor linearity using a harmonic-impedance-controlled technique is presented, and is applied to a generic optimization methodology of intermodulation distortion in SiGe HBTs. Harmonic load-pull simulations and measurement results are used to prove the usefulness of this optimization approach.

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Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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