{"title":"1.5 GHz OPAMP在120nm数字CMOS","authors":"Franz Schlögl, H. Zimmermann","doi":"10.1109/ESSCIR.2004.1356662","DOIUrl":null,"url":null,"abstract":"A high-speed operational amplifier, employing only regular-threshold devices in a 120 nm digital CMOS technology, with a two-signal-path topology, is presented. A single-stage high-frequency path allows a transit frequency of 1.5 GHz and a two-stage low-frequency path increases the DC gain to 40 dB. A new near-rail-to-rail class AB output stage is achieved with two local common-mode feedback loops.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"1.5 GHz OPAMP in 120nm digital CMOS\",\"authors\":\"Franz Schlögl, H. Zimmermann\",\"doi\":\"10.1109/ESSCIR.2004.1356662\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high-speed operational amplifier, employing only regular-threshold devices in a 120 nm digital CMOS technology, with a two-signal-path topology, is presented. A single-stage high-frequency path allows a transit frequency of 1.5 GHz and a two-stage low-frequency path increases the DC gain to 40 dB. A new near-rail-to-rail class AB output stage is achieved with two local common-mode feedback loops.\",\"PeriodicalId\":294077,\"journal\":{\"name\":\"Proceedings of the 30th European Solid-State Circuits Conference\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 30th European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIR.2004.1356662\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356662","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high-speed operational amplifier, employing only regular-threshold devices in a 120 nm digital CMOS technology, with a two-signal-path topology, is presented. A single-stage high-frequency path allows a transit frequency of 1.5 GHz and a two-stage low-frequency path increases the DC gain to 40 dB. A new near-rail-to-rail class AB output stage is achieved with two local common-mode feedback loops.