基于多电压/电流变换器的低功耗mtj真随机数发生器设计

Shogo Mukaida, N. Onizawa, T. Hanyu
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引用次数: 3

摘要

本文介绍了一种采用三端磁隧道结(MTJ)器件的用于低功率真随机数发生器(TRNG)的多v /I转换器。由于MTJ器件是由电流概率开关的,因此所需的50%概率由数模(D/A)和V/I转换器数字控制。在传统的基于MTJ的TRNG中,需要高精度(和大功率)的D/ a来承受MTJ器件的大温度变化。该电路通过根据温度变化动态改变特性,降低了D/A转换器的位精度,同时又能像传统的V/I转换器那样产生随机数的质量。该电路采用65nm CMOS/三端MTJ模型设计,并使用HSPICE进行仿真。因此,D/ a转换器的位数从10位减少到7位。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of a Low-Power MTJ-Based True Random Number Generator Using a Multi-voltage/Current Converter
In this paper, we introduce a multi-V/I converter for low-power true random number generator (TRNG) using a three-terminal magnetic tunnel junction (MTJ) device. As MTJ devices are probabilistically switched by current, the desired probability of 50% is digitally controlled by digital-to-analog (D/A) and V/I converters. In the conventional MTJ-based TRNG a highly accurate (and large-power) D/A is required to be tolerate to large temperature variation of MTJ devices. By changing the characteristics dynamically according to the temperature variation, the proposed circuit can reduce the bit precision of the D/A converter while generating the quality of random number as the conventional V/I converter. The circuit is designed with a 65nm CMOS/three-terminal MTJ model, and the simulation is carried out using HSPICE. As a result, the number of bits of the D/A converter is reduced from 10 bits to 7 bits.
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