集成电阻的器件级电热分析

B. Vermeersch, G. De Mey
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引用次数: 6

摘要

本文介绍了集成薄膜电阻器的电热模拟。热和电的问题都是用半解析的方法来解决的,而不需要产生一个等效的分布式网络。由于电导率与温度有关,电阻器的自热会改变电流分布,导致功率耗散不均匀。这引起了温度分布的变化,解释了电热耦合。给出了各种实际电阻器设计的实例。经过几次迭代,得到了电阻值和热阻值以及温度和功率分布的稳定值。结果表明,即使根据估计的平均温度预测自热过程,其行为仍然会偏离原始设计。这完全是由组件内部分布的不均匀性引起的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Device Level Electrothermal Analysis of Integrated Resistors
This paper presents the electrothermal simulation of integrated thin film resistors. Both the thermal and electrical problem is tackled by a semi-analytical method, without the need of generating an equivalent distributed network. As the electrical conductivity is temperature dependent, self-heating of the resistor will alterate the current distribution, leading to a non-uniform power dissipation. This then provokes a change of the temperature distribution, explaining the electrothermal coupling. Examples are given for various practical resistor designs. After a few iterations stable values for the electrical and thermal resistance and temperature and power distributions are obtained. The results show that even if one would anticipate the self-heating process based on an estimated average temperature, the behaviour will still deviate from the original design. This is caused entirely by the non-uniformity of the distributions inside the component.
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