Hui-Dong Lee, Sunwoo Kong, Bonghyuk Park, Kwangchun Lee, Jeongsoo Park, Jeong‐Geun Kim
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A 28-GHz 28.5-dBm power amplifier using 0.15-µm InGaAs E-mode pHEMT technology
This paper describes the design of a 28-GHz 28.5-dBm power amplifier using a 0.15-µm InGaAs E-mode pHEMT technology. We have sought a method to obtain the required output power through the characteristics of the unit transistor provided by the manufacturer. For this purpose, the PA circuit is configured to effectively combine the output signals of eight unit transistors. As a result of the verification, 28.5-dBm output was obtained at 28-GHz and the maximum efficiency was more than 24.5%. The power amplifier draws 335 mA under a 6.4 V supply at 28.5-dBm output.
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